Deuterated Ammonia (ND3)
Deuterated Ammonia is used in Gigabyte DRAM production as a source of reservoir of deuterium in silicon nitride and silicon oxynitride passivation films. The heavier mass of the deuterium is desired to enhance the lifetime of specific transistors when the diffusion of the deuterium portion replaces lost hydrogen.
Threshold Limit Value (TLV): 25ppm
Physical properties: Toxic, corrosive and flammable
Physical Constants for ND3 |
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Physical Constants for NH3 |
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Maximum Impurities |
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